New logic level MOSFETs for low VGS
Available in three different voltage classes (60V, 80V, and 100V), Infineon’s logic level OptiMOS™ 5 power MOSFETs in PQFN 3.3 x 3.3 and IR MOSFET™ in PQFN 2×2 are highly suitable for wireless charging, adapter and telecom applications.
The devices’ low gate charge (Qg) reduces switching losses without compromising conduction losses. The improved figures of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (VGS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.
Despite the low gate charge, the products achieve a lower RDS(on) compared to the next best alternative.