Obsolete Micron Technology M29F800T55 Series NOR Flash Memory, M29F800FB5AN6F2

This description applies specifically to the M29F 16Mb (2 Meg x 8 or 1 Meg x 16) nonvo-latile memory device, but also applies to lower densities. The device enables READ,ERASE, and PROGRAM operations using a single, low-voltage (4.5–5.5V ) supply.

M29F800FB5AN6F2 come in 1,5K/Reel package 48TSSOP.

Key Features

  • Supply voltage– VCC = 5V
  • Access time: 55ns
  • Program/erase controller– Embedded byte/word program algorithms
  • Erase suspend and resume modes
  • Low power consumption– Standby and automatic standby
  • 100,000 PROGRAM/ERASE cycles per block
  • Electronic signature– Manufacturer code: 0x01
  • RoHS-compliant packages– TSOP48– SO44 (16Mb not available for this package)
  • Automotive device grade 3– Temperature: –40 to +125°C
  • Automotive device grade 6– Temperature: –40 to +85°C
  • Automotive grade certified (AEC-Q100)

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